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| SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 500 A, VGE = 0V Continuous Collector Current TC = 25 OC TC = 90 C Pulsed Collector Current, Pulse Width limited by TjMax Zero Gate Voltage Collector Current VCE = 1200 V, VGE=0V Ti=25 C VCE = 800 V, VGE=0V Ti=125 C Collector to Emitter Saturation Voltage, IC = 40A, VGE = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature RJC Tjmax Tjmax -40 -55 0.55 150 150 o o o O BVCES 1200 - - V IC - - 60 40 A ICM ICES - - 100 A 1 10 Tj = 25 OC Tj = 125 C O mA mA V VCE(SAT) - 1.9 2.1 2.3 - C/W o C C o (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 PRODUCT PARAMETERS - (TC=25 oC unless otherwise noted) Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 100 105 10 20 SPM6G060-120D 110 o C 10mV/oC o C ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 OC Forward Pulse Current, Pulse Width limited by TjMax Diode Forward Voltage, Diode Reverse Recovery Time (IF=40A, VRR=600V , di/dt=800 A/s) Maximum Thermal Resistance RJC 0.9 o PIV IF IFp VF trr 1200 - 1.8 1.8 240 40 100 2.3 - V A A V nsec IF = 40A, Tj = 25 OC Tj = 125 C O C/W Gate Driver Supply Voltage Supply Input Current at Vcc, Pin 19, Without PWM Switching , with 10KHz PWM at Two Inputs Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5mA HIN, LIN Ith BVin VF 2 5.0 1.6 1.5 35 50 5.0 1.7 mA mA V V mA VCC 14 15 18 V (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 2 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D Under Voltage Lockout ITRIP Reference Voltage (1) Input-to-Output Turn On Delay Output Turn On Rise Time Input-to-Output Turn Off Delay Output Turn Off Fall Time @ VCC=500V, IC=40A, TC = 25 Dead Time Requirement, for Shoot Through Prevention Opto-Isolator Input-to-Output Isolation Voltage, momentary Opto-Isolator Operating Input Common Mode Voltage Opto-Isolator Operating Input Common Mode Transient Immunity, with Iin > 5mA Pin-To-Case Isolation Voltage, DC Voltage VCCUV Itrip-ref tond tr toffd tf 9.0 1.57 600 1.63 750 120 1200 160 750 2500 11.5 1.68 - V V nsec nsec 1000 10 V V KV/usec V - - - 1500 - DC Bus Current Sensor Shunt Resistor Value Current Amplifier Gain, Referenced to Signal Gnd Current Amplifier DC Offset (Zero DC Bus Current) Current Amplifier Response Time 5 0.049 0.010 3 0.030 mOhm V/A V usec (1) ITRIP current limit is internally set to 35A peak. The set point can be lowered by connecting a resistor between Itrip-ref and Gnd. The set point can be increased by connecting a resistor between Itrip-ref and +5V ref. The off time duration is about 70 usec. (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 3 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 +15V +15V Rtn (Signal Gnd1) HIN-A HIN-A SPM6G060-120D 10 Gnd1 +VDC HIN-A Rtn 10 LIN-A LIN-A PH-A LIN-A Rtn HIN-B HIN-B Rtn 10 HIN-B 10 LIN-B LIN-B Rtn HIN-C HIN-C Rtn 10 LIN-C LIN-C Rtn 2.74K SD FLT FLT-CLR +5V-out Over-Current Ref 1nF Ido (Standard ) Ido (Optional) 1nF 1K 1K G=9.8 5V Regulator +5V To-SD 8.87k TCo 0.1uF Gnd1 Temperature Sensor Heat-Sinck To SD 0.005 +VDC Rtn 31.6K 10K 2.74K 2.5K PH-C +5V +5V LIN-C HIN-C LIN-B 10 PH-B Figure 1. Internal Circuit Block Diagram (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 4 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D Figure 2 - Package Drawing Top & Side Views (All dimensions are in inches, tolerance is +/- 0.010") (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 5 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D Figure 3 - Package Pin Locations (All dimensions are in inches; tolerance is +/- 0.005" unless otherwise specified) (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 6 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 PIN OUT Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Name HinA HinA-Rtn NC LinA LinA-Rtn NC HinB HinB-Rtn NC LinB LinB-Rtn HinC HinC-Rtn LinC LinC-Rtn NC NC NC Vcc SPM6G060-120D Description Isolated Drive Input for High-side IGBT of Phase A Return for Input at 1 Not Connected Isolated Drive Input for Low-side IGBT of Phase A Return for Input at 4 Not Connected Isolated Drive Input for High-side IGBT of Phase B Return for Input at 7 Not Connected Isolated Drive Input for Low-side IGBT of Phase B Return for Input at 10 Isolated Drive Input for High-side IGBT of Phase C Return for Input at 12 Isolated Drive Input for Low-side IGBT of Phase C Return for Input at 14 Not Connected Not Connected Not Connected +15V input biasing supply connection for the controller. Under-voltage lockout keeps all outputs off for Vcc below 10.5V. Vcc pin should be connected to an isolated 15V power supply. Vcc recommended limits are 14V to 16V , and shall not exceed 18V. The return of Vcc is pin 20. Recommended power supply capability is about 70mA. 20 +15V Rtn (3) Signal ground for all signals at Pins 19 through 27. This ground is internally connected to the +VDC Rtn through 1.7 Ohms. It is preferred not to have external connection between Signal Gnd and +VDC Rtn. (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 7 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D Pin # 21 Name SD (3) Description It is an active low, dual function input/output pin. It is internally pulled high to +5V by 2.74K . As a low input it shuts down all IGBTs regardless of the Hin and Lin signals. SD is internally activated by the over-temperature shutdown, overcurrent limit, and desaturation protection Desaturation shutdown is a latching feature. Over-temperature shutdown, and over-current limit are not latching features. SD can be used to shutdown all IGBTs by an external command. An open collector switch shall be used to pull down SD externally. SD can be used as a fault condition output. Low output at SD indicates a latching fault situation. 22 Flt (3) It is a dual function input/output pin. It is an active low input, internally pulled high to +5V by 2.74K . If pulled down, it will freeze the status of all the six IGBTs regardless of the Hin and Lin signals. As an output, Pin 13, reports desaturation protection activation. When desaturation protection is activated a low output for about 9 sec is reported. If any other protection feature is activated, it will not be reported by Pin 22. is a fault clear input. It can be used to reset a latching fault condition, due to desaturation protection. Pin 23 an active high input. It is internally pulled down by 2.0K. A latching fault due to desaturation can be cleared by pulling this input high to +5V by 200-500, or to +15V by 3-5K, as shown in Fig. 6. It is recommended to activate fault clear input for about 300 sec at startup. 23 Flt-Clr (3) (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 8 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D Pin # 24 Name +5V Output Itrip-Ref (3) Description +5V output. Maximum output current is 30mA Adjustable voltage divider reference for over-current shutdown. Internal pull-up to +5V 31.6K, pull down to ground is 10K, and hysteresis resistance of 49.9K. The internal set point is 1.64V, corresponding to over-current shutdown of 34A. The re-start delay time, off time, is about 70 usec. DC bus current sense amplifier output. The sensor gain is 0.049V/A. The internal impedance of this output is 1K, and internal filter capacitance is 1nF. Analog output of case temperature sensor. The sensor output gain is 0.010 V/oC, with zero DC offset. This sensor can measure both positive and negative oC. The internal impedance of this output is 8.87K. The internal block diagram of the temperature sensor is shown in Fig. 5. 25 26 Idco 27 TCo 28 &29 30 & 31 32 & 33 34 & 35 36 & 37 Case PhA PhB PhC +VDC Rtn +VDC Case Phase A output Phase B Output Phase C Output DC Bus return DC Bus input Isolated From All Terminals (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 9 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D Application Notes a- Input Interface: Recommended input turn-on current for all six drive signals is 5-8mA. For higher noise immunity the tri-state differential buffer, DS34C87, is recommended as shown in Fig. 4. Note : Connect LinA to non-inverting output for a non-inverting input logic. Connect LinA to inverting output for an inverting input logic. 300-400 One Channel of DS34C87 2-5K LinA-R LinA OptoCoupler Input Fig. 4. Input Signal Buffer b-Temperature Sensor Output: 8.87K Pin 27 0.1uF Fig. 5 Temperature Sensor Internal Block Diagram For both negative and positive temperature measurement capability, Contact the Factory. (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 10 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D c- System Start Up Sequence: Activate fault clear input for about 300 sec at startup. The micro-controller enable output is inverted and fed to the second DS34C87 control input. When the controller is in disable mode, the Flt-clr is enabled and Phase C low-side IGBT is turned on. This allows for the bootstrap circuit of the highside IGBT of Phase C to be charged. At the same time, the high-side bootstrap circuits of Phases A and B will charge through the motor winding. Once the controller is enabled, PWM signals of all channels should start. Fig. 6 shows a recommended startup circuit. Notes: 1- Gnd1 and Gnd2 are isolated grounds from each other. 2- The +5V power supply used for DS34C87 is an isolated power supply. 3- The +15V power supply used for SPM6G060-120D is an isolated power supply. DS34C87 HinA LinA HinB LinB Enable OutA-P OutA-N OutB-P InB OutB-N InC OutC-P OutC-N InD OutD-P A/B Cont OutD-N +5V C/D Cont Gnd InA DS34C87 OutA-P OutA-N OutB-P InB OutB-N InC OutC-P OutC-N InD OutD-P A/B Cont OutD-N +5V C/D Cont Gnd InA 350 350 350 350 2.74k 2.74k +5V-in Gnd2 350 350 350 350 2.74K 15V Flt-Clr 2.74k 2.74k 2.74k HinA HinA-R LinA LinA-R HinB HinB-R LinB LinB-R HinC HinC-R LinC LinC-R Micro Controller HinC LinC SPM6G060-120D 2.74K SFH6186-4 Gnd1 Fig. 6 Input Interface and Startup Circuit (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 11 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 Truth Table For DS34C87 Input H L X Control Input H H L Non-Inverting Output H L Z SPM6G060-120D Inverting Output L H Z d- DC Bus Charging from 15V D1 Vcc +15V R1 100K D2 DSH Q1H VBS D3 +VDC R2 100K 700 K DSL 700 K * PhA Q1L +15V Rtn Sgnl Gnd1 Gate Driver +VDC Rtn Figure 7. * * * * Charging Path from 15V Supply to DC Bus when DC Bus is off * Each IGBT is protected against desaturation. D2 is the desaturation sense diode for the high-side IGBT D3 is the desaturation sense diode for the low-side IGBT When the DC bus voltage is not applied or below 15V, there is a charging path from the 15V supply to the DC bus through D2 and D3 and the corresponding pull up 100K Ohm resistor. The charging current is 0.15mA per IGBT. Total charging current is about 1.5mA. Do not apply PWM signal if the DC bus voltage is below 20V. (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 12 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D e- Active Bias For Desaturation Detection Circuit: The desaturation detection is done by diode D2 for the high side IGBT Q1H, and by diode D3 for the low side IGBT Q1L. The internal detection circuit, input DSH for the high-side and input DSL for the low-side, is biased by the local supply voltage VCC for the low side and VBS for the high side. When the IGBT is on the corresponding detection diode is on. The current flowing through the diode is determined by the internal pull resistor, R1 for the high side and R2 for the low side. To minimize the current drain from VCC and VBS, R1 and R2 are set to be 100K. Lower value of R1 will overload the bootstrap circuit and reduce the bootstrap capacitor holding time. To increase the circuit noise immunity, an active bias circuit is used to lower R1 and R2 when the corresponding IGBT is off by monitoring the input voltage at both DSH, DSL inputs. If the inputs at DSH drops below 7V the active bias is disabled. The active bias circuits result in reducing R1 or R2 to about 110 when the corresponding input is above 8V, as shown in Fig. 8. This active circuit results in higher noise immunity. R1 R1 100K R1 110 VDSH 7V 8V Figure 8. Active Bias for DSH and DSL Internal Inputs (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 13 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D f- Limitation With Trapezoidal Motor Drive In trapezoidal motor drives, two phases are conducting while the third phase is off at any time. In Fig. 9 shows the voltage waveform across one phase, during intervals t1 and t2, the IGBT is off while the active bias circuit is above 8V, and below 15V. This results in activating the active pull up circuit and reducing the corresponding R1 or R2 down to about 110 . A high current will flow from VCC or VBS through R2 or R1 and the motor winding during intervals t1, and t2. This results in draining the bootstrap capacitor voltage quickly. Contact the factory for adjustments to satisfy trapezoidal motor drive applications using this module. The adjustment will disable the internal pull up circuit. The device part number is SPM6G060-120D-B. V 15 8 time t1 t2 Figure 9. Active Bias for DSH and DSL Internal Inputs (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 14 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D g- IGBT and Diode Switching Characteristics and Waveforms: g.1- Test Conditions: VCE=500V, IC= 30A Test Results: Rise time tr= 50 nsec, Fall time tf= 150 nsec Current Scale is 10A/div, Voltage Scale is 100V/div, Power Loss Scale is 5000Watt/div Turn On Switching Loss = 2.24 mJ, Turn Off Switching Loss = 2.56 mJ VCE IC Diode Reverse Recovery Current PL Figure 10. Switching Waveforms at IC = 30A (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 15 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D g.2- Test Conditions: VCE=500V, IC= 53A Test Results: Rise time tr= 140 nsec, Fall time tf= 180 nsec Current Scale = 20A/div, Voltage Scale = 100V/div, Power Loss Scale = 10000Watt/div Turn On Switching Loss = 5.2 mJ, Turn Off Switching Loss = 5.4 mJ VCE PL IC Diode Reverse Recovery Current Figure 11. Switching Waveforms at IC = 53A (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 16 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D VCE PL IC Figure 12. Turn On Switching Waveforms at IC = 53A (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 17 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D VCE IC PL Figure 13. Turn Off Switching Waveforms at IC = 53A (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 18 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D h- IGBT and Diode Conduction Characteristics: Tj=25oC Tj=150oC Figure 14. IGBT Conduction Characteristics Figure 15. Diode Conduction Characteristics (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 19 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 SPM6G060-120D i- Increasing Current Limit Window: The adjustable over-current shutdown reference at Pin25 is internally set to 1.64V corresponding to 34A. A voltage divider reference is used as shown in Fig.16. Internal pull-up to +5V is 31.6K, pull down to ground is 10K, and hysteresis resistance to SD is 49.9K. The re-start delay time, off time, is about 70 usec. In order to increase the over-current shutdown reference to 2.8V, corresponding to 57A peak current, an external pull-up resistance R is needed. It is recommended to add R=9 K between Pins 21 and 25. The corresponding off time will be about 170usec. The additional R=9 K will reduce the high level of SD to 4.4V. Pin 24 +5V R4 2.74K Pin 21 SD R1 31.6K R3 49.9K Pin 20 +15V Rtn Signal Gnd R2 10K Pin 25 Itrip-ref Figure 16. Internal Over-Current Shutdown Reference (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 20 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4165, Rev. C.3 j- Cleaning Process: SPM6G060-120D Suggested precaution following cleaning procedure: If the parts are to be cleaned in an aqueous based cleaning solution, it is recommended that the parts be baked immediately after cleaning. This is to remove any moisture that may have permeated into the device during the cleaning process. For aqueous based solutions, the recommended process is to bake for at least 2 hours at 125oC. Do not use solvents based cleaners. k- Soldering Procedure: Recommended soldering procedure Signal pins 1 to 27: 210C for 10 seconds max Power pins 28 to 37: 260C for 10 seconds max. Pre-warm module to 125C to aid in power pins soldering. Ordering Information: SPM6G060-120D comes standard with a uni-directional current sense signal. For optional bi-directional current sense signal, add -A to the part number as follows: SPM6G060-120D-A. For trapezoidal motor drive applications. The device part number is SPM6G060-120D-B. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. (c) 2004 Sensitron Semiconductor * 221 West Industry Court * Deer Park, NY 11729 * (631) 586 7600 FAX (631) 242 9798 * www.sensitron.com * sales@sensitron.com * Page 21 |
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